DocumentCode
610634
Title
Is the bulk vs. SOI battle over?
Author
Strojwas, A.J.
Author_Institution
Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2013
fDate
22-24 April 2013
Firstpage
1
Lastpage
2
Abstract
Following Intel´s lead in the 22nm technology, it seems that the industry has decided that the junction-isolated FinFET on bulk is the dominant technology for the next two nodes, namely 14 and 10nm. In this talk, we will examine the reasoning behind such decision and evaluate the likelihood of alternative solutions such as dielectrically-isolated FinFET and FDSOI/UTBB for a broad spectrum of high volume products driving the semiconductor industry.
Keywords
MOSFET; semiconductor junctions; silicon; silicon-on-insulator; FDSOI/UTBB; Si; dielectrically-isolated FinFET; high volume product; junction-isolated FinFET; semiconductor industry; size 10 nm; size 14 nm; size 22 nm; Computer architecture; FinFETs; Logic gates; Low-power electronics; Silicon; Substrates; System-on-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location
Hsinchu
Print_ISBN
978-1-4673-3081-7
Electronic_ISBN
978-1-4673-6422-5
Type
conf
DOI
10.1109/VLSI-TSA.2013.6545649
Filename
6545649
Link To Document