DocumentCode :
610738
Title :
Ultrafast degenerate pump-probe studies of SI-GaAs and LT-GaAs
Author :
Anusha, P.T. ; Tewari, S.P. ; Rao, S.V.
Author_Institution :
Adv. Centre of Res. in High Energy Mater. (ACRHEM), Univ. of Hyderabad, Hyderabad, India
fYear :
2012
fDate :
9-12 Dec. 2012
Firstpage :
1
Lastpage :
3
Abstract :
We present the measurements of excited state dynamics in LT-GaAs, SI-GaAs using picosecond pump-probe experiment at 800 nm performed in non-resonant conditions (photon energy > Eg of GaAs). The intensity dependent dynamics are also investigated.
Keywords :
III-V semiconductors; carrier lifetime; excited states; gallium arsenide; high-speed optical techniques; infrared spectra; terahertz wave spectra; GaAs; carrier lifetime; excited state dynamics; low-temperature gallium arsenide; picosecond pump-probe experiment; semiinsulating gallium arsenide; terahertz radiation; ultrafast degenerate pump-probe study; wavelength 800 nm;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Fiber Optics and Photonics (PHOTONICS), 2012 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-4718-1
Type :
conf
Filename :
6545755
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=610738
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