DocumentCode :
610777
Title :
Optoelectronic devices based on III-N quantum wells grown on CVD graphene
Author :
Gupta, Puneet ; Rahman, Alias Abdul ; Hatui, N. ; Gokhale, M.R. ; Deshmukh, M.M. ; Bhattacharya, Avik
Author_Institution :
Tata Inst. of Fundamental Res., Mumbai, India
fYear :
2012
fDate :
9-12 Dec. 2012
Firstpage :
1
Lastpage :
2
Abstract :
We report the synthesis and optical characterization of GaN/AlGaN and InGaN/GaN quantum well structures grown on CVD graphene layers. We demonstrate a novel process allowing facile transfer of QW multilayers to other (cheap, flexible) substrates.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optoelectronic devices; photoluminescence; quantum well devices; semiconductor devices; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; C; CVD graphene layers; GaN-AlGaN; III-N quantum wells; InGaN-GaN; cheap flexible substrates; optical characterization; optoelectronic devices; quantum well multilayers; quantum well structures;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Fiber Optics and Photonics (PHOTONICS), 2012 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-4718-1
Type :
conf
Filename :
6545795
Link To Document :
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