On the simulation of carrier dynamics in terahertz photoconductive antennas

This communication shows the relevance of accounting for accurate physical models of carrier dynamics for the simulation of radiative semiconductor photoconductive devices in the terahertz operation regime. In particular, a significant influence of the semiconductor biased state was displayed for calculating the radiated electromagnetic field at the broadside direction. Comparison with experimental measurements demonstrates the superior performance of numerical schemes, including a detailed description of the biasing, considering not only the electric potential but also the carrier dynamics and local mobilities.