Approximate evaluation of effective permittivity for metal dummies in a CMOS chip using electrostatic capacitor model

Author

Hirano, Takuichi ; Okada, Kenichi ; Hirokawa, Jiro ; Ando, Makoto

Author_Institution

Dept. of Int. Dev. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2013

fDate

8-12 April 2013

Firstpage

1218

Lastpage

1220

Abstract

Approximate evaluation method of effective permittivity for metal dummies in a CMOS chip is proposed. The effective permittivity is calculated using electrostatic capacitor model, which enables very quick estimation of the effective permittivity. Calculated effective permittivity coincides with the one analyzed by electromagnetic eigenmode analysis within the difference of 3.2 %. For verification, calculated S-parameters of the real model and approximated effective material model are compared. They agreed very well.

Keywords

CMOS integrated circuits; S-parameters; capacitors; eigenvalues and eigenfunctions; field effect MIMIC; permittivity; CMOS chip; approximated effective material model; calculated S-parameters; effective permittivity; electromagnetic eigenmode analysis; electrostatic capacitor model; metal dummies; CMOS integrated circuits; Capacitance; Electrostatics; Metals; Permittivity; Scattering parameters; Semiconductor device modeling; CMOS; Metal dummy; approximation; capacitance; effective permmitivity; electrostatic; millimeter-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (EuCAP), 2013 7th European Conference on

Conference_Location

Gothenburg

Print_ISBN

978-1-4673-2187-7

Electronic_ISBN

978-88-907018-1-8

Type

conf

Filename

6546473