Title :
Approximate evaluation of effective permittivity for metal dummies in a CMOS chip using electrostatic capacitor model
Author :
Hirano, Takuichi ; Okada, Kenichi ; Hirokawa, Jiro ; Ando, Makoto
Author_Institution :
Dept. of Int. Dev. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Approximate evaluation method of effective permittivity for metal dummies in a CMOS chip is proposed. The effective permittivity is calculated using electrostatic capacitor model, which enables very quick estimation of the effective permittivity. Calculated effective permittivity coincides with the one analyzed by electromagnetic eigenmode analysis within the difference of 3.2 %. For verification, calculated S-parameters of the real model and approximated effective material model are compared. They agreed very well.
Keywords :
CMOS integrated circuits; S-parameters; capacitors; eigenvalues and eigenfunctions; field effect MIMIC; permittivity; CMOS chip; approximated effective material model; calculated S-parameters; effective permittivity; electromagnetic eigenmode analysis; electrostatic capacitor model; metal dummies; CMOS integrated circuits; Capacitance; Electrostatics; Metals; Permittivity; Scattering parameters; Semiconductor device modeling; CMOS; Metal dummy; approximation; capacitance; effective permmitivity; electrostatic; millimeter-wave;
Conference_Titel :
Antennas and Propagation (EuCAP), 2013 7th European Conference on
Conference_Location :
Gothenburg
Print_ISBN :
978-1-4673-2187-7
Electronic_ISBN :
978-88-907018-1-8
