Title :
A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy
Author :
Ruonan Han ; Afshari, Ehsan
Author_Institution :
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A high-power broadband 260-GHz radiation source using 65-nm bulk CMOS technology is reported. The source is an array of eight harmonic oscillators with mutual coupling through four 130-GHz quadrature oscillators. Based on a novel self-feeding structure, the harmonic oscillator simultaneously achieves the optimum conditions for the fundamental oscillation and the 2nd-harmonic generation. The signals at 260 GHz radiate through eight on-chip slot antennas, and are in-phase combined inside a hemispheric silicon lens attached at the backside of the chip. Similar to the laser pulse-driven photoconductive emitter in many THz spectrometers, the radiation of this source can also be modulated by narrow pulses generated on chip, which achieves broad radiation bandwidth. Without modulation, the chip achieves a measured continuous-wave radiated power of 1.1 mW, and an EIRP of 15.7 dBm. Under modulation, the measured bandwidth of the source is 24.7 GHz. This radiator array consumes 0.8-W DC power from a 1.2-V supply.
Keywords :
CMOS integrated circuits; antenna arrays; antenna feeds; oscillators; slot antenna arrays; 2nd-harmonic generation; CMOS high-power broadband radiator array; THz spectrometers; bandwidth 24.7 GHz; broad radiation bandwidth; bulk CMOS technology; frequency 130 GHz; frequency 260 GHz; harmonic oscillators; hemispheric silicon lens; high-power broadband radiation source; laser pulse-driven photoconductive emitter; mutual coupling; on-chip slot antennas; power 0.8 W; power 1.1 mW; quadrature oscillators; self-feeding structure; size 65 nm; voltage 1.2 V; Arrays; CMOS integrated circuits; Harmonic analysis; Logic gates; Oscillators; Power generation; Transistors; CMOS; EIRP; harmonic oscillator; on-chip slot antenna; self feeding; signal source; silicon lens; spectroscopy; terahertz;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2013.2272864