Title :
GaSb-Based Diode Lasers With Asymmetric Separate Confinement Heterostructure
Author :
Rui Liang ; Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Abstract :
A design for GaSb-based type-I quantum well diode lasers with an AlGaInAsSb/GaInAsSb active region, GaSb and AlGaAsSb separate confinement layers, and an AlSb/InAs hole stopper is proposed. The suppression of carrier recombination outside of the active region leads to improved laser efficiency and temperature stability. At a heatsink temperature of 17°C, the 2-mm-long, 100-μm-wide, anti-/high-reflection coated devices demonstrate threshold current densities of ~ 350 A/cm2 and emit ~ 220 mW of continuous wave output power at 3.15 μm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser stability; semiconductor lasers; GaSb-based diode lasers; asymmetric separate confinement heterostructure; carrier recombination; continuous wave output power; heatsink temperature; hole stopper; laser efficiency; quantum well diode lasers; temperature stability; threshold current densities; Carrier stopper; GaSb-based; diode lasers; mid-infrared; separate confinement heterostructure; type-I quantum well (QW);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2256118
