DocumentCode :
61218
Title :
Design of GaN Doherty Power Amplifiers for Broadband Applications
Author :
Jin Shao ; Rongguo Zhou ; Han Ren ; Arigong, Bayaner ; Mi Zhou ; Hyoung Soo Kim ; Hualiang Zhang
Author_Institution :
Electr. Eng. Dept., Univ. of North Texas, Denton, TX, USA
Volume :
24
Issue :
4
fYear :
2014
fDate :
Apr-14
Firstpage :
248
Lastpage :
250
Abstract :
This letter presents a modified Doherty power amplifier (DPA) architecture to release bandwidth limitation of the conventional DPA. The proposed DPA structure eliminates two quarter wavelength impedance inverters used in the conventional DPAs. Instead, both the carrier and peak amplifiers in the proposed DPA are matched to 70 Ω at the output ports, which enables an easier implementation of broadband matching networks. Broadband input matching network (IMN) and output matching network (OMN) are then designed to achieve wideband DPA with enhanced performance. To verify the design concept, a broadband DPA is designed, fabricated, and measured on a RT/Duroid 5880 substrate with 2.2 dielectric constant and 0.787 mm substrate thickness. In the working frequency bands (0.8 to 1.2 GHz), the designed DPA provides 50.8% to 78.5% power-added efficiency (PAE) at full output power, 30.3% to 40.1% PAE at 6 dB of output power back-off (OBO), 10.8 to 14.8 dB gain (the gain variation is within 2.6 dB over different input power levels at each specific frequency), and maximum output power between 40.2 and 42.9 dBm.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; invertors; network synthesis; wide band gap semiconductors; wideband amplifiers; GaN; IMN; OBO; OMN; PAE; RT-Duroid 5880 substrate; bandwidth limitation application; broadband input matching network; broadband output matching network; dielectric constant; efficiency 30.3 percent to 40.1 percent; efficiency 50.8 percent to 78.5 percent; frequency 0.8 GHz to 1.2 GHz; gain 10.8 dB to 14.8 dB; gain 2.6 dB; gain 6 dB; modified Doherty power amplifier architecture; output power back-off; power-added efficiency; quarter wavelength impedance inverter; resistance 70 ohm; size 0.787 mm; wideband DPA; Bandwidth; Broadband amplifiers; Gain; Gallium nitride; Impedance; Inverters; Broadband; Doherty power amplifiers (DPAs); GaN; gain flatness; power-added efficiency (PAE);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2013.2293659
Filename :
6712911
Link To Document :
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