• DocumentCode
    61220
  • Title

    Experiments and Three-Dimensional Modeling of Delamination in an Encapsulated Microelectronic Package Under Thermal Loading

  • Author

    Siow Ling Ho ; Joshi, Shailendra P. ; Tay, A.A.O.

  • Author_Institution
    Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore
  • Volume
    3
  • Issue
    11
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    1859
  • Lastpage
    1867
  • Abstract
    Interfacial delamination in encapsulated silicon devices has been a great reliability concern in IC packaging. Experimental testing of a transparent quad flat no leads package is carried out with the goal of studying the delamination characteristics and investigating the viability of cohesive zone modeling in simulating delamination patterns and trends. The pattern of initiation and propagation of delamination under thermal loading is the focus of this paper. A microscope is focused on the interface between the pad and the encapsulant to capture the progressive delamination in a package that was molded without a die. When the temperature reaches a critical value, delaminations are observed to initiate and propagate in a certain pattern. The experimental setup is then modeled within the finite element framework, with the failure of the interface described through a cohesive-zone surface interaction approach. With a slight modification to the experimental procedure and through a separate finite element model, the fracture energy of the interface is estimated. It is found that the 3-D numerical model is able to capture the experimentally observed delamination pattern satisfactorily.
  • Keywords
    delamination; electronics packaging; finite element analysis; IC packaging; cohesive zone modeling; cohesive zone surface interaction approach; encapsulated microelectronic package; finite element framework; finite element model; fracture energy; interfacial delamination; thermal loading; three dimensional modeling; transparent quad flat no leads package; Delamination; Loading; Materials; Microelectronics; Numerical models; Stress; Temperature measurement; Coefficient of thermal expansion mismatch; cohesive zone model (CZM); delamination; delamination initiation; delamination propagation; electronics packaging; encapsulant; failure analysis; failure pattern; finite element methods (FEMs); fracture mechanics; interface fracture; interfacial fracture energy; quad flat no leads (QFN) package; reliability; stress concentration thermal stress; thermomechanical stress;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2013.2266406
  • Filename
    6570743