New topic session 7B: Challenges and directions for ultra-low voltage VLSI circuits and systems: CMOS and beyond

In this talk, a unitary perspective is given on the design challenges involved in ultra-low voltage (ULV) VLSI circuits and systems, as well as on directions to tackle them. Innovative approaches are described to improve the energy efficiency of ULV systems, while maintaining adequate resiliency and yield with low overhead. Experimental results based on the testing of 65-nm to 28-nm prototypes are presented to develop a quantitative sense of the achievable benefits. Emphasis is given on applications that require extremely high energy efficiency, such as compact portable devices and energy-autonomous VLSI systems. Although CMOS is the mainstream choice for the foreseeable future, Tunnel FETs (TFETs) are introduced as very promising alternative that favors more aggressive voltage scaling and energy reduction. Although still immature, device-circuit co-design is shown to be critical to the success of such technology. Potential of TFETs is discussed in a general framework through representative metrics and vehicle circuits, emphasizing how design will be impacted by their adoption.