DocumentCode
613032
Title
RSAK: Random stream attack for phase change memory in video applications
Author
Yuntan Fang ; Huawei Li ; Xiaowei Li
Author_Institution
State Key Lab. of Comput. Archit. Inst. of Comput. Technol., Beijing, China
fYear
2013
fDate
April 29 2013-May 2 2013
Firstpage
1
Lastpage
6
Abstract
As an emerging non-volatile memory technology, phase change memory (PCM) is promising as an alternative for traditional memories such as DRAM. In spite of its non-volatility, high density, low standby power, and resilience to soft errors, PCM has a limited write endurance or lifetime, which means that each PCM cell can only be overwritten finite times. More importantly, limited lifetime potentially provides malicious attackers an opportunity to intentionally aggravate write traffic into PCM. In this paper, from the standpoint of attackers, we propose random stream attacks (RSAK) methods for phase change memory used in video applications. Experimental results show that compared to natural video sequences, RSAK incurs higher total write traffic or worsened lifetime. RSAK also gives hints on how to build a more secure PCM in video applications to counter malicious write streams.
Keywords
DRAM chips; phase change memories; security of data; video streaming; DRAM; PCM cell; RSAK; RSAK methods; intentionally aggravate write traffic; malicious attackers; malicious write streams; natural video sequences; nonvolatile memory technology; phase change memory; random stream attack; video applications; Encoding; Measurement; Phase change materials; Random access memory; Security; Streaming media; Video sequences; Lifetime; PCM; random stream attack; security; write endurance;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium (VTS), 2013 IEEE 31st
Conference_Location
Berkeley, CA
ISSN
1093-0167
Print_ISBN
978-1-4673-5542-1
Type
conf
DOI
10.1109/VTS.2013.6548937
Filename
6548937
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