AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

Author

Jae-Hoon Lee ; Chanho Park ; Ki-Sik Im ; Jung-Hee Lee

Author_Institution

Discrete Dev. Team, Samsung Electron. Co., Ltd., Giheung, South Korea

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3032

Lastpage

3039

Abstract

We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate. The fabricated GaN-SBD with size of 9 mm² exhibited excellent device characteristics such as forward current of 4.5 A at 1.5 V, leakage current of 6 μA at 600 V, and high breakdown voltage of 747 V. The temperature variations of GaN-SBD for the reverse recovery characteristics are negligible and the value of reverse-recovery charge (Q)_rr of GaN-SBD is one twentieth of Si-diode at 175°C.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; leakage currents; semiconductor device breakdown; semiconductor heterojunctions; wide band gap semiconductors; Al₂O₃; AlGaN-GaN; AlGaN/GaN heterostructure; AlGaN/GaN-based lateral-type Schottky barrier diode; active structure; bonding pad; breakdown voltage; current 4.5 A; current 6 muA; forward current characteristics; high temperature; leakage current; reverse recovery charge; sapphire substrate; temperature 175 degC; voltage 1.5 V; voltage 600 V; voltage 747 V; Aluminum gallium nitride; Current measurement; Gallium nitride; Leakage currents; Silicon; Temperature; Temperature measurement; AlGaN/GaN; Schottky barrier diode (SBD); multifinger pattern; reverse recovery charge; sapphire;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2273271

Filename

6570754