Title :
AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature
Author :
Jae-Hoon Lee ; Chanho Park ; Ki-Sik Im ; Jung-Hee Lee
Author_Institution :
Discrete Dev. Team, Samsung Electron. Co., Ltd., Giheung, South Korea
Abstract :
We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate. The fabricated GaN-SBD with size of 9 mm2 exhibited excellent device characteristics such as forward current of 4.5 A at 1.5 V, leakage current of 6 μA at 600 V, and high breakdown voltage of 747 V. The temperature variations of GaN-SBD for the reverse recovery characteristics are negligible and the value of reverse-recovery charge (Q)rr of GaN-SBD is one twentieth of Si-diode at 175°C.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; leakage currents; semiconductor device breakdown; semiconductor heterojunctions; wide band gap semiconductors; Al2O3; AlGaN-GaN; AlGaN/GaN heterostructure; AlGaN/GaN-based lateral-type Schottky barrier diode; active structure; bonding pad; breakdown voltage; current 4.5 A; current 6 muA; forward current characteristics; high temperature; leakage current; reverse recovery charge; sapphire substrate; temperature 175 degC; voltage 1.5 V; voltage 600 V; voltage 747 V; Aluminum gallium nitride; Current measurement; Gallium nitride; Leakage currents; Silicon; Temperature; Temperature measurement; AlGaN/GaN; Schottky barrier diode (SBD); multifinger pattern; reverse recovery charge; sapphire;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2273271
