DocumentCode
613559
Title
Yield-oriented energy and performance model for subthreshold circuits with Vth variations
Author
Berge, H.K.O. ; Aunet, Snorre
Author_Institution
Dept. of Inf., Univ. of Oslo, Oslo, Norway
fYear
2013
fDate
8-10 April 2013
Firstpage
193
Lastpage
198
Abstract
We present a method to analyze the minimum energy point of subthreshold logic circuits, taking into account the effect of gate sizing and the transistor threshold voltage variability. With respect to a target yield, technology and circuit parameters this method can give estimates of optimal choices for supply voltage and gate sizing, as well as serve as a tool for design space exploration and technology comparision. We apply this modeling technique to a 90 nm technology, and draw contour plots of the design space. These plots indicate that larger than minimum size gates may be required to achieve minimum energy operation in the subthreshold domain. Optimal voltages range from about 350 mV to 550 mV, depending on the switching activity of the circuit. In the appendix we also give a method of approximating the sum of iid. log-normal RVs, which is used to analyze the timing performance of gates in series.
Keywords
logic circuits; logic design; transistors; circuit parameters; design space exploration; gate sizing; log-normal RV; minimum size gates; size 90 nm; subthreshold logic circuit performance model; supply voltage; transistor threshold voltage variability; yield-oriented energy; Capacitance; Delays; Junctions; Logic gates; MOS devices; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2013 IEEE 16th International Symposium on
Conference_Location
Karlovy Vary
Print_ISBN
978-1-4673-6135-4
Electronic_ISBN
978-1-4673-6134-7
Type
conf
DOI
10.1109/DDECS.2013.6549815
Filename
6549815
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