Design of an S-band 0.35 µm AlGaN/GaN LNA using cascode topology

Author

Kao, H.L. ; Yeh, C.S. ; Cho, C.L. ; Wang, B.W. ; Lee, P.C. ; Wei, B.H. ; Chiu, H.C.

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2013

fDate

8-10 April 2013

Firstpage

250

Lastpage

253

Abstract

This paper presents an S-band low noise amplifier that uses a two-stage configuration. The first stage has a cascode topology and the second stage has a RC feedback topology. The S-band LNA uses a 0.35 μm AlGaN/GaN HEMT on a Si-substrate. The results show a maximum gain of 17.2 dB, a minimum noise figure of 2.9 dB and an input/output return loss greater than 9.2/10 dB. The input IIP3 at 2.8 GHz is 2.5 dBm and the unit consumes 230 mW of power.

Keywords

UHF amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; low noise amplifiers; microwave amplifiers; AlGaN-GaN; AlGaN-GaN HEMT; AlGaN-GaN LNA; RC feedback topology; S-band LNA; Si; Si substrate; cascode topology; frequency 2.8 GHz; low noise amplifier; power 230 mW; size 0.35 mum; two-stage configuration; Aluminum gallium nitride; Gain; Gallium nitride; HEMTs; Noise figure; Silicon; Substrates; AlGaN/GaN HEMT on Si; LNA; S-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2013 IEEE 16th International Symposium on

Conference_Location

Karlovy Vary

Print_ISBN

978-1-4673-6135-4

Electronic_ISBN

978-1-4673-6134-7

Type

conf

DOI

10.1109/DDECS.2013.6549827

Filename

6549827