DocumentCode
613576
Title
Redundancy algorithm for embedded memories with block-based architecture
Author
Kristofik, S. ; Gramatova, E.
Author_Institution
Inst. of Comput. Syst. & Networks, Slovak Univ. of Technol., Bratislava, Slovakia
fYear
2013
fDate
8-10 April 2013
Firstpage
271
Lastpage
274
Abstract
Built-in self-repair (BISR) is widely used to repair embedded memories within system on a chip (SoC) designs to improve their yield. One key component of the BISR circuit responsible for allocating redundancies is the redundancy analysis (RA) algorithm. One of the most important parameters used to evaluate RA algorithms is repair rate (the ratio of the number of the repaired memories to the number of faulty memories). In most BISR designs, redundancies are used on the row/column level. Some approaches target the block-based architecture where both memories and redundancies are divided into several blocks. Thus, allocation can be done on the block level and is more effective in terms of repair rate. These approaches, however, cannot guarantee optimal repair rate. In this paper, we propose a redundancy analysis algorithm for bit-oriented memories with block-based redundancy architecture with optimal repair rate.
Keywords
built-in self test; integrated circuit design; integrated memory circuits; redundancy; system-on-chip; BISR circuit; BISR design; SoC design; bit-oriented memory; block-based architecture; block-based redundancy architecture; built-in self-repair; embedded memory repairing; redundancy allocation; redundancy analysis algorithm; repair rate; system on a chip design; Algorithm design and analysis; Buffer storage; Circuit faults; Clustering algorithms; Maintenance engineering; Memory architecture; Redundancy; built-in redundancy analysis; embedded memory; redundancy analysis algorithm; repair rate;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2013 IEEE 16th International Symposium on
Conference_Location
Karlovy Vary
Print_ISBN
978-1-4673-6135-4
Electronic_ISBN
978-1-4673-6134-7
Type
conf
DOI
10.1109/DDECS.2013.6549832
Filename
6549832
Link To Document