DocumentCode :
61389
Title :
Scaling Limits of Electrostatic Nanorelays
Author :
Pawashe, Chytra ; Lin, Kai-Chun ; Kuhn, Kelin J.
Author_Institution :
Design Technol. Solutions Group, Intel Corp., Hillsboro, OR, USA
Volume :
60
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
2936
Lastpage :
2942
Abstract :
A model to explore the scaling limits of electrostatically actuated nanorelays is presented, which shows that adhesion in a nanorelay´s contact interface limits its performance with respect to operating voltage, contact resistance, and switching energy. For logic applications, we show that an ultimately scaled relay can be more efficient than conventional metal-oxide-semiconductor devices if (1) it is designed with very high contact resistances, leading to ≈ 1-MHz operation due to large RC delays, or (2) its actuation area is extremely large compared with its contacting area, leading to very low voltage operation, which reduces overall CV2 losses. We propose new relay scaling relations that account for the scaling of contact interfaces.
Keywords :
contact resistance; microrelays; nanoelectromechanical devices; RC delay; actuation area; adhesion; contact interface scaling; contact resistance; electrostatic nanorelay; electrostatically actuated nanorelay; logic application; nanorelay contact interface; operating voltage; relay scaling relation; scaling limit; switching energy; Adhesives; Electrostatics; Force; Junctions; Nanoscale devices; Relays; Switches; Nanoelectromechanical systems (NEMS); relays;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2273217
Filename :
6570762
Link To Document :
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