Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid

Author

Rahimo, Munaf ; Canales, Francisco ; Minamisawa, Renato Amaral ; Papadopoulos, Charalampos ; Vemulapati, Umamaheswara ; Mihaila, Andrei ; Kicin, Slavo ; Drofenik, Uwe

Author_Institution

Grid Syst. R&D, ABB Switzerland Ltd., Lenzburg, Switzerland

Volume

30

Issue

9

fYear

2015

fDate

Sept. 2015

Firstpage

4638

Lastpage

4642

Abstract

A parallel arrangement of a silicon (Si) IGBT and a silicon carbide (SiC) MOSFET is experimentally demonstrated. The concept referred to as the cross-switch (XS) hybrid aims to reach optimum power device performance by providing low static and dynamic losses while improving the overall electrical and thermal properties due to the combination of both the bipolar Si IGBT and unipolar SiC MOSFET characteristics. For the purpose of demonstrating the XS hybrid, the parallel configuration is implemented experimentally in a single package for devices rated at 1200 V. Test results are obtained to validate this approach with respect to the static and dynamic performance when compared to a full Si IGBT and a full SiC MOSFET reference devices having the same power ratings as for the XS hybrid samples.

Keywords

elemental semiconductors; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; silicon; silicon compounds; wide band gap semiconductors; Si; SiC; XS hybrid; bipolar IGBT; cross-switch hybrid; dynamic loss; electrical property; optimum power device performance; static loss; thermal property; unipolar MOSFET; voltage 12 V; Insulated gate bipolar transistors; MOSFET; Performance evaluation; Silicon; Silicon carbide; Switches; Hybrid; IGBT; MOSFET; Silicon; Silicon Carbide; silicon (Si); silicon carbide (SiC);

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2015.2402595

Filename

7038193