Novel technique for preparation of metal sulfide nano-structured semiconducting wide area diode

Novel low cost deposition technique for p-n junction preparation has been performed for low temperature deposition. The substrate was dipped in a precursor followed by solid state reaction at 200°C. Nano-structured films were produced as multi-layers. The technique has been employed for binary and ternary metal sulfides thin films ZnCdS and Cu2S as well as p-n junction preparation. X-ray diffraction analysis indicated the polycrystalline nature of the deposited material with crystallite size in the range 5 to 20 nm. Atomic force microscopy shows a good film surface conditions and particle size in the range 30-40 nm. The interface ZnCdS/Cu₂S was imaged by SEM and shows good layer adherence. Au/ZnCdS/Cu₂S/Au diode device was fabricated by this technique. The I-V characteristics indicates that a good rectification properties of the device. The diode parameters - temperature show that the barrier height increase from 0.6 to 0.9 V while ideality factor decreases from 2.6 to 1.6 when the temperature is changed from 300 to 400 K, the output power of the device under illumination shows a small output power conversion in compared with its cost.