Title :
Harmonic and intermodulation performance of MoS2FET- and GFET-based amplifiers
Author :
Abuelma´atti, Muhammad Taher
Author_Institution :
Dept. of Electr. Eng., King Fahd Univ. of Pet. & Miner., Dhahran, Saudi Arabia
Abstract :
This paper presents a simple mathematical model for the output-voltage/ input-voltage characteristic of the graphene field effect transistor (GFET)-based and the MoS2FET-based inverting amplifiers. The model, basically a Fourier series, yields closed-form expressions for the amplitudes of the harmonic and intermodulation components of the output voltage resulting from a multisinusoidal input voltage. The special case of a two-tone equal-amplitude input voltage is considered in detail. The results show that the harmonic and intermodulation performance of the complementary GFETand the MoS2FET-based inverting amplifiers is strongly dependent on the bias voltage and the amplitudes of the input tones with the third-order intermodulation component dominating over a wide range of the input voltage amplitudes.
Keywords :
Fourier series; amplifiers; field effect transistors; graphene; intermodulation; invertors; mathematical analysis; molybdenum compounds; C; Fourier series; GFET-based inverting amplifier; MoS2FET-based inverting amplifier; MoS2; closed-form expression; graphene field effect transistor; harmonic amplitude component; intermodulation amplitude component; mathematical model; multisinusoidal input voltage; output-voltage-input-voltage characteristics; third-order intermodulation component; two-tone equal-amplitude input voltage; Closed-form solutions; Electronic circuits; Equations; Field effect transistors; Graphene; Harmonic analysis; Mathematical model; GFET; MoS2FET; amplifiers; harmonics; intermodulation;
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International
Conference_Location :
Fira
Print_ISBN :
978-1-4673-6196-5
Electronic_ISBN :
978-1-4673-6194-1
DOI :
10.1109/SIECPC.2013.6550754