• DocumentCode
    614349
  • Title

    Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

  • Author

    Qaisi, Ramy ; Smith, Colin ; Hussain, M.M.

  • Author_Institution
    Integrated Nanotechnol. Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
  • fYear
    2013
  • fDate
    27-30 April 2013
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis.
  • Keywords
    Raman spectra; chemical vapour deposition; graphene; multilayers; thin films; transparency; C; Raman spectra; atmospheric pressure chemical vapor deposition based growth; atomic crystal structure material; bilayer graphene film; electrical property analysis; energy harvesting; energy storage; multilayer graphene film; physical characterization; pressure 1 atm; radio frequency circuitry; semimetallic material; time variant layer control; transparent material; Carbon; Chemical vapor deposition; Copper; Glass; Graphene; Optical films; Raman spectroscopy; atmospheric pressure chemical vapor deposition (APCVD); graphene;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International
  • Conference_Location
    Fira
  • Print_ISBN
    978-1-4673-6196-5
  • Electronic_ISBN
    978-1-4673-6194-1
  • Type

    conf

  • DOI
    10.1109/SIECPC.2013.6550799
  • Filename
    6550799