Title :
A simple drain current model for carbon nanotube field effect transistors
Author :
Marki, Rebiha ; Azizi, Cherifa ; Zaabat, Mourad
Abstract :
As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. Carbon nanotube field effect transistor (CNTFET) is found to be one of the most promising alternatives for bulk Si MOSFET. In this work we have simulated a cylindrical CNTFET. Based on the simulation results both output and transfer characteristic curves are plotted and analyzed. We have also studied the effect of different parameters .
Keywords :
carbon nanotube field effect transistors; semiconductor device models; C; CNTFET; carbon nanotube field effect transistors; drain current model; output characteristic curve; transfer characteristic curve; CNTFETs; Carbon nanotubes; Electric potential; Electron tubes; MOSFET; Nanoscale devices; CNTFET; Static properties; nanotube diameter;
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International
Conference_Location :
Fira
Print_ISBN :
978-1-4673-6196-5
Electronic_ISBN :
978-1-4673-6194-1
DOI :
10.1109/SIECPC.2013.6550986
