Title :
Absorption and single-pass gain measurements in bilayer quantum dot laser structure
Author :
Majid, Mazlina A. ; Childs, D.T.D. ; Kennedy, Krista ; Airey, R. ; Hogg, R.A. ; Clarke, Edmund ; Spencer, Peter ; Murray, R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
In this paper we report on the absorption and single-pass gain analysis of molecular beam epitaxy (MBE) grown bilayer quantum dot (QD) laser material using multisection method. The measurement allowed us to exclude unguided spontaneous emission and measure the internal optical loss accurately.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; molecular beam epitaxial growth; optical loss measurement; optical losses; quantum dot lasers; InAs-GaAs; MBE; absorption measurement; bilayer quantum dot; bilayer quantum dot laser structure; internal optical loss; laser material; molecular beam epitaxy; multisection method; single-pass gain measurement; Absorption; Gain measurement; Gallium arsenide; Measurement by laser beam; Optical variables measurement; Quantum dot lasers; Temperature measurement; Molecular beam epitaxy; gain and absorption; multi-section; quantum dots (QDs);
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International
Conference_Location :
Fira
Print_ISBN :
978-1-4673-6196-5
Electronic_ISBN :
978-1-4673-6194-1
DOI :
10.1109/SIECPC.2013.6550989
