A fully integrated distributed active transformer based power amplifier in 0.13 µm CMOS technology

Author

Khan, H.R. ; Sajid, U. ; Kanwal, S. ; Zafar, Faiza ; Wahab, Q.

Author_Institution

Electron. Design Centre, NED Univ. of Eng. & Technol., Karachi, Pakistan

fYear

2013

fDate

27-30 April 2013

Firstpage

1

Lastpage

6

Abstract

This paper presents a fully integrated CMOS Power Amplifier designed in 0.13 um CMOS technology. The power combining topology based upon Distributed Active Transformer structures is employed to achieve high output power from several stages. A simple design methodology for DAT modeling is presented and the suitability of inverse Class-D amplifier in DAT is discussed. Simulation results validate the methodology and use of inverse Class-D amplifier. The designed PA delivers output power of 27.6 dBm at 1.8 GHz from a 1 V DC supply at 46.3% PAE while keeping the device stress within safe limits. The efficiency is maximum at 52% at 1.7 GHz. The amplifier is suitable for GSM, PCS and other wireless standards.

Keywords

CMOS analogue integrated circuits; UHF power amplifiers; impedance convertors; DAT modeling; GSM; PCS; distributed active transformer structures; efficiency 46.3 percent; efficiency 52 percent; frequency 1.7 GHz; frequency 1.8 GHz; fully integrated CMOS power amplifier; fully integrated distributed active transformer; high output power; inverse class-D amplifier; power combining topology; size 0.13 mum; voltage 1 V; wireless standards; Capacitance; Couplings; Inductors; Power amplifiers; Power generation; Slabs; Windings; Distributed Active Transformer; Fully integrated; Inverse Class D; Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International

Conference_Location

Fira

Print_ISBN

978-1-4673-6196-5

Electronic_ISBN

978-1-4673-6194-1

Type

conf

DOI

10.1109/SIECPC.2013.6550995

Filename

6550995