Carbon-rich nanostructured a-SiC for cold emitters

Author

Gordienko, S.A. ; Nazarov, A.N. ; Lytvyn, P.M. ; Stadnik, A.A. ; Gomeniyuk, Yu.Yu. ; Rusavsky, A.V. ; Vasin, A.V. ; Stepanov, V.G. ; Lysenko, V.S. ; Nazarova, T.M.

Author_Institution

Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2013

fDate

16-19 April 2013

Firstpage

76

Lastpage

79

Abstract

This work describes emission properties of a new nanostructured material which is carbon-rich amorphous (a) SiC deposited on silicon wafer. Even non-optimized technology demonstrates that the field enhanced factor of the electron emission can reach of 1000 with current density near 1×10^-3A/cm² and efficiency of electron emission near 10%. A good correlation between charge transfer through the a-SiC layer and electron emission from the material in high vacuum is observed.

Keywords

current density; electron emission; nanostructured materials; silicon compounds; wide band gap semiconductors; SiC; carbon-rich nanostructure; charge transfer; cold emitters; current density; electron emission; emission properties; field enhanced factor; nanostructured material; silicon wafer; Annealing; Carbon; Electron emission; Films; Silicon; Surface morphology; Surface topography; carbon-rich a-SiC; cold emitter; conductance AFM;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference

Conference_Location

Kiev

Print_ISBN

978-1-4673-4669-6

Type

conf

DOI

10.1109/ELNANO.2013.6552000

Filename

6552000