Title :
Thermal resistance of power submicron heterojunction field-effect transistors
Author :
Timofeyev, Vladimir ; Semenovskaya, Elena
Author_Institution :
Dept. of Phys. & Biomed. Electron., Nat. Tech. Univ. of Ukraine KPI, Kiev, Ukraine
Abstract :
The paper presents a method for thermal resistance calculating of power submicron heterojunction field-effect transistor. Described method establishes dependence of the thermal resistance of the transistor on its thermo- and electrophysical parameters, geometrical size and shape. The results of thermal resistance calculation for submicron transistors are proved by experiment and show good agreement.
Keywords :
geometry; power field effect transistors; thermal resistance; electrophysical parameter; geometrical shape; geometrical size; power submicron heterojunction field-effect transistor; thermal resistance calculation; thermophysical parameter; Field effect transistors; Heating; Logic gates; Substrates; Thermal resistance; power submicron heterojunction field-effect transistor; thermal model; thermal resistance;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location :
Kiev
Print_ISBN :
978-1-4673-4669-6
DOI :
10.1109/ELNANO.2013.6552007
