DocumentCode :
614442
Title :
Multiphysics effects and electronic properties of anisotropic semiconductor quantum dots
Author :
Prabhakar, Sanjay ; Melnik, Roderick
Author_Institution :
M2NeT Lab., Wilfrid Laurier Univ., Waterloo, ON, Canada
fYear :
2013
fDate :
16-19 April 2013
Firstpage :
217
Lastpage :
219
Abstract :
In this paper we analyze a number of important coupled effects in semiconductor quantum dots with multiband models, including magneto-electromechanical coupling. We also demonstrate that the Rashba spin-orbit coupling may provide appreciable contributions to electronic properties of quantum dots by focusing on gate-controlled electron spins in quantum dots.In particular, we analyze the properties of anisotropic semiconductor quantum dots formed in the conduction band in the presence of the magnetic field. For this case, we formulate the Kane-type model and based on it we study the properties of dots by using both analytical and finite element techniques. It is shown that that in semiconductor quantum dots, the electron spin states in the phonon-induced spin-flip rate can be manipulated with the application of externally applied anisotropic gate potentials. The spin flip rates can be enhanced by such potentials, which can also reduce the level crossing points to lower quantum dot radii. We provide numerical examples providing further insight into these new findings where it is evident that these observed effects are due to the suppression of the g-factor towards bulk crystal. Based on these findings, the phonon induced spin-flip rate can be controlled through the application of spin-orbit coupling. Other coupled effects that affect the electronic properties of quantum dots are also discussed.
Keywords :
conduction bands; electromechanical effects; finite element analysis; g-factor; magnetic field effects; phonons; semiconductor quantum dots; spin-orbit interactions; Kane-type model; Rashba spin-orbit coupling; analytical techniques; anisotropic gate potentials; anisotropic semiconductor quantum dots; conduction band; electron spin states; electronic properties; finite element techniques; g-factor suppression; gate-controlled electron spins; low quantum dot radii; magnetic field; magnetoelectromechanical coupling; multiband models; multiphysics effects; phonon-induced spin-flip rate; Couplings; Electric potential; Logic gates; Perpendicular magnetic anisotropy; Phonons; Quantum dots; Low dimensional nanostructures; band structure calculations; coupled multiphysics effects; electromechanics; electron-phonon coupling; finite element method; quantum dots; quantum-continuum coupling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location :
Kiev
Print_ISBN :
978-1-4673-4669-6
Type :
conf
DOI :
10.1109/ELNANO.2013.6552020
Filename :
6552020
Link To Document :
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