Title :
Development of technology of multicomponent instrument compositions formation on the basis of porous silicon
Author :
Ivanovna, Zubko Evgeniya ; Yakovlevich, Shvets Evgenii
Author_Institution :
Dept. of Phys. & Biomed. Electron., Zaporozhye State Eng. Acad., Zaporozhye, Ukraine
Abstract :
Technological scheme for a formation of electron instrument compositions PcCu /por-Si/n-Si and PcAl/por-Si/n-Si has been developed. The data on the technological adaptation of the deposition and annealing of samples have been given. The effect of annealing for morphological and electrical characteristics of the obtained compositions has been investigated.
Keywords :
aluminium compounds; annealing; copper compounds; electrical resistivity; elemental semiconductors; multilayers; organometallic compounds; porous semiconductors; semiconductor-insulator boundaries; silicon; surface morphology; Si; annealing; deposition; electrical properties; morphological properties; multicomponent electron instrument compositions; porous silicon; Annealing; Films; Instruments; Silicon; Substrates; Surface treatment; Temperature; compositions; phthalocyanine; porous silicon; pulverization; structuring; substrates; technology;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location :
Kiev
Print_ISBN :
978-1-4673-4669-6
DOI :
10.1109/ELNANO.2013.6552036
