Title :
Modeling of electronic radiation influence to transistors
Author :
Tuyakbayev, A.A. ; Baizhumanov, M.K. ; Tuyakbaev, D.A.
Author_Institution :
Acad. of the Civil Aviation, Almaty, Kazakhstan
Abstract :
The paper presents a single-level model to identify the constant of the radiation changes in the lifetime of minority carriers in the base of n-p-n transistors, DLTS spectra base of n-p-n transistors and describes the results.
Keywords :
bipolar transistors; radiation effects; semiconductor device models; semiconductor device reliability; semiconductor device testing; DLTS spectra; bipolar transistor; electronic radiation modeling; minority carrier lifetime; n-p-n transistor; radiation change; single-level model; Bipolar transistors; Boron; Charge carriers; Mathematical model; Radiation effects; Silicon; Transistors; DLTS-spectra; bipolar transistors; divacancy; electron irradiation; lifetime; radiation center; radiation effects; recombination component; vacancy;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location :
Kiev
Print_ISBN :
978-1-4673-4669-6
DOI :
10.1109/ELNANO.2013.6552069
