Title :
Modeling of velocity «overshoot» in the multivalley semiconductors
Author :
Bol, Konstantin ; Moskalyuk, Vladimir
Author_Institution :
Phys. & Biomed. Electron. Dept., Nat. Tech. Univ. of Ukraine Kyiv Polytech. Inst., Kiev, Ukraine
Abstract :
Using the relaxation equations of energy balance, momentum and occupation of valleys, the possibility of modeling of the effect of drift velocity "overshoot” is shown in multivalley semiconductors on the example of aluminium nitride.
Keywords :
III-V semiconductors; aluminium compounds; electron relaxation time; many-valley semiconductors; wide band gap semiconductors; AlN; aluminium nitride; drift velocity overshoot effect; equations of momentum; multivalley semiconductors; relaxation equations of energy balance; valley occupation; Aluminum; Conferences; Electron mobility; Equations; Mathematical model; Monte Carlo methods; Nanotechnology; “overshoot” of drift velocity; aluminium nitride; energy relaxation; intervalley relaxation; multivalley semiconductors; times of momentum;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location :
Kiev
Print_ISBN :
978-1-4673-4669-6
DOI :
10.1109/ELNANO.2013.6552071
