Dual-Top-Gated Graphene field-effect transistors to improve the subthreshold swing for digital applications

In this paper, we investigate the scaling capability of Dual-Top-Gated Graphene field-effect transistors (DTGG-FETs) using an analytical analysis of the subthreshold-swing factor, in which new analytical expressions of the Drain current and the subthreshold-swing models are proposed. Then analytical expressions for the drain current and the subthreshold-swing behavior are achieved, which are given as function of electrical and dimensional device parameters. Based on the developed models, we have studied the immunity of the proposed DTGGFET design against the short-channel-effects and the scalability limits of the DTGG and conventional Single-Material, SMGFETs, design in order to compare their performances. The obtained results make the proposed DTGG design an alternative solution for future G-FETs-based digital nanoelectronic applications.