Title :
A simplified modelling approach for AlGaN/GaN HEMTs using pinched cold S-parameters
Author_Institution :
Electr. Eng. Dept., King Faisal Univ., Al-Ahsa, Saudi Arabia
Abstract :
In this paper, a simplified small-signal modeling approach for GaN HEMTs has been developed. The main advantage of this approach is its dependency on only cold pinchoff S-parameter measurements to extract the parasitic elements of the device. S-parameter measurements at different bias conditions in addition to physical based analysis have been used to validate the accuracy and reliability of the developed modeling method.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; bias conditions; cold pinchoff S-parameter measurements; parasitic elements; pinched cold S-parameters; simplified small-signal modeling approach; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Scattering parameters; Silicon carbide; Substrates; GaN HEMT; computer aided analysis; parameter extraction; semiconductor device modeling;
Conference_Titel :
Modeling, Simulation and Applied Optimization (ICMSAO), 2013 5th International Conference on
Conference_Location :
Hammamet
Print_ISBN :
978-1-4673-5812-5
DOI :
10.1109/ICMSAO.2013.6552633
