Title :
50 GHz mm-Wave CMOS Active Inductor
Author :
Pepe, Domenico ; Zito, Domenico
Author_Institution :
Tyndall Nat. Inst., Cork, Ireland
Abstract :
This letter presents a millimeter-wave active inductor circuit designed and fabricated in 65 nm bulk CMOS technology. The measurement results show an equivalent inductance of 133 pH with a quality factor exceeding 400 at 50 GHz, demonstrating experimentally for the first time the possibility to implement high- Q active inductors in CMOS technology operating at the mm-waves.
Keywords :
CMOS integrated circuits; field effect MIMIC; inductors; bulk CMOS technology; circuit design; frequency 50 GHz; high-Q active inductor; millimeter-wave active inductor; mm-wave CMOS active inductor; size 65 nm; Active inductors; Artificial intelligence; CMOS integrated circuits; Current measurement; Inductance; Q-factor; Spirals; Active inductor; CMOS; millimeter-waves;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2295224
