ANFIS-based computation to study the nanoscale circuit including the hot-carrier and quantum confinement effects

In this paper, we present a new approach based on fuzzy logic for the modeling of the subthreshold swing factor by using the Adaptive Network Fuzzy Inference System (ANFIS). It is also assumed that the nanoscale Double Gate (DG) MOSFET device under study is subject to both hot-carrier and quantum effects. Afterward, an analytical expression is deduced for the transconductance parameter from the subthreshold swing fuzzy model. The developed framework is then adopted as a basis of studying the degradation mechanism of a single transistor amplifier. The obtained results show good agreement with the numerical simulations provided by ATLAS 2D-simulator. The proposed model presented in this paper offers a simple and accurate approach to study the nanoscale CMOS-based circuit behavior including the hot-carrier damage and quantum effects.