Characterization methodology to support process development of advanced patterning structures

Ever increasing complexity in advanced patterning and new multilayer integration schemes pose significant development and control challenges as industry transits to 2x and below technology node. Accurate process characterization with quick turn-around time is the key for process development. This is particularly true when multiple patterning and integration schemes need to be evaluated and compared during development in order to achieve the required technical specifications within the needed cycle time. Accordingly, there is ever increasing need for fast, reliable and effective characterization methodologies at the fingertips of the process engineer. Reliable and accurate detection of various failure mechanisms with advanced metrology and voltage contrast technique is expected to play critical role as we move to three dimensional structures for 1x nodes and below. In this paper we describe the characterization and metrology toolbox and demonstrate how the combination of various characterization & metrology solutions can provide dramatic improvement in process development cycle time for complex contact/trench patterning. The multiple techniques in the toolbox are used together for effective feedback to process development. Inline virtual contrast techniques to maximize the visibility and detection of various failure mechanisms, advanced OCD techniques and conventional CD-SEM and TEM for profile and critical dimension pave the way for swift patterning evaluation and development. Using as metric the strong correlation between conventional, optical, inline, electrical and yield we present results that confirm the synergy of toolbox methodologies and qualify the success of this approach. This paper focused on evaluation and process development of double patterning complex contact/trench structure where first patterning