Novel photodefined polymer-clad through-silicon via technology integrated with endpoint detection using optical emission spectroscopy

Author

Thadesar, Paragkumar A. ; Ja Myung Gu ; Dembla, Ashish ; Sang Jeen Hong ; May, Gary S. ; Bakir, Muhannad S.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2013

fDate

14-16 May 2013

Firstpage

56

Lastpage

61

Abstract

Silicon interposers with through-silicon vias (TSVs) have been widely explored to obtain high density and high bandwidth communication between chips. To reduce TSV electrical loss and stress, novel photodefined polymer-clad TSVs are fabricated. Moreover, to reduce via under or over etching during TSV fabrication and accurately predict the endpoint for TSV etching, a hybrid partial least squares-support vector machine (PLS-SVM) model of optical emission spectroscopy (OES) data is successfully demonstrated. Accurate endpoint detection results are shown for 80 μm diameter TSVs.

Keywords

etching; integrated circuit interconnections; integrated circuit manufacture; integrated circuit testing; least squares approximations; spectroscopy; support vector machines; three-dimensional integrated circuits; TSV electrical loss; TSV etching; TSV fabrication; TSV stress; endpoint detection; hybrid partial least squares support vector machine model; optical emission spectroscopy; photodefined polymer clad through silicon via technology; silicon interposer; size 80 mum; Copper; Etching; Fabrication; Polymers; Silicon; Support vector machines; Through-silicon vias; 3D integration; SU-8 cladding; TSV; endpoint detection for Si DRIE etch; optical emission spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-5006-8

Type

conf

DOI

10.1109/ASMC.2013.6552775

Filename

6552775