Methods of removing solvent-like residues from wafer backside bevel

Author

Sheng-Yuan Chang ; Cheng-Yi Lung ; An Chyi Wei ; Hong-Ji Lee ; Nan-Tzu Lian ; Tahone Yang ; Kuang-Chao Chen ; Chih-Yuan Lu

Author_Institution

Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2013

fDate

14-16 May 2013

Firstpage

291

Lastpage

294

Abstract

During silicon oxide hard-mask-based Al metal line patterning, the imperceptible CFx polymer featured with solvent-like residues around wafer backside bevel area was detected by energy dispersive x-ray spectroscopy (EDS) after conventional cleaning scheme (O2 ashing plus wet cleaning). In this study, additional bevel etching process and wafer pin-up function applied in O2 plasma asher before wet cleaning both could completely remove such solvent-like residues from wafer backside bevel area.

Keywords

X-ray chemical analysis; aluminium; carbon compounds; cleaning; etching; masks; oxygen; polymers; silicon compounds; Al; Al metal line patterning; CF_x; EDS; O₂; SiO; ashing; bevel etching process; cleaning scheme; energy dispersive X-ray spectroscopy; oxygen plasma asher; polymer; silicon oxide hard-mask; solvent-like residue removal; wafer backside bevel; wafer pin-up function; wet cleaning; Cleaning; Etching; Manufacturing; Metals; Plasmas; Polymers; Silicon; Bevel etching; Edge bead removal; Pin-up function; Solvent-like residues; Wet cleaning;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-5006-8

Type

conf

DOI

10.1109/ASMC.2013.6552822

Filename

6552822