Title :
Integrated photodiode characterization in a SiGe BiCMOS process
Author :
Sharif-Bakhtiar, Alireza ; Shahramian, Shayan ; Rousson, Alain ; Yasotharan, Hemesh ; Carusone, Tony Chan
Author_Institution :
Univ. of Toronto, Toronto, ON, Canada
Abstract :
In this paper three photodetector structures were simulated, fabricated and characterized at 850nm in a SiGe BiCMOS process. The measurement and simulation results suggest that the additional vertical layers offered by SiGe process compared to CMOS can facilitate higher detector bandwidth at the expense of reduced low frequency responsivity.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency response; integrated optics; photodetectors; photodiodes; BiCMOS process; SiGe; frequency responsivity; integrated photodiode; photodetectors; Bandwidth; BiCMOS integrated circuits; Detectors; Optical receivers; Photodiodes; Silicon germanium;
Conference_Titel :
Optical Interconnects Conference, 2013 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4673-5061-7
Electronic_ISBN :
978-1-4673-5062-4
DOI :
10.1109/OIC.2013.6552927
