DocumentCode :
615027
Title :
Evaluation of SiGe multiple quantum well modulators for short-reach, dense wavelength division multiplexed optical interconnects
Author :
Lentine, Anthony L. ; Kekatpure, Rohan D.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2013
fDate :
5-8 May 2013
Firstpage :
94
Lastpage :
95
Abstract :
By modeling temperature-dependent SiGe MQW electroabsorption, we calculate the number of allowed DWDM channels as a function of operating temperature, applied voltage, and a figure of merit related to the laser power penalty. We find that 20 to 40 DWDM channels at 100 GHz and 50 GHz channel spacing is possible in DWDM links with a ~12° temperature range with less than a 1 dB laser power penalty compared to the optimum single channel, single temperature case. The same number of channels can be supported over a 37° temperature range with a 3 dB power penalty.
Keywords :
Ge-Si alloys; channel spacing; electro-optical modulation; electroabsorption; optical communication equipment; optical interconnections; optical links; quantum well devices; semiconductor materials; semiconductor quantum wells; wavelength division multiplexing; DWDM channels; DWDM links; SiGe; SiGe multiple quantum well modulators; channel spacing; laser power penalty; short-reach dense wavelength division multiplexed optical interconnects; temperature-dependent SiGe MQW electroabsorption; Optical modulation; Optical resonators; Silicon; Silicon germanium; Temperature distribution; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Interconnects Conference, 2013 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4673-5061-7
Electronic_ISBN :
978-1-4673-5062-4
Type :
conf
DOI :
10.1109/OIC.2013.6552932
Filename :
6552932
Link To Document :
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