DocumentCode :
61555
Title :
Dynamic Behavior of Coupled Memristor Circuits
Author :
Dongsheng Yu ; IU, Herbert Ho-Ching ; Yan Liang ; Fernando, Tyrone ; Chua, Leon O.
Author_Institution :
Sch. of Inf. & Electr. Eng., China Univ. of Min. & Technol., Xuzhou, China
Volume :
62
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
1607
Lastpage :
1616
Abstract :
This paper reports on the dynamic behavior of dual coupled memristors (MRs) in serial and parallel connections in consideration of polarity combination and coupling strength. Based on the constitutive relations, two flux coupled MRs are adopted for demonstration to theoretically exhibit the variation of memductance in terms of flux, charge, voltage, and current. The coupled MRs are also serially connected with a regular resistor to further explore its memristive behavior. Theoretical analysis reported in this paper is confirmed via a simulation study, and then an experimental investigation is carried out using a practical circuit emulating the dual coupled MRs. Good agreement between experimental and simulation results confirms that dual coupled MRs in composite connections behave as a new MR with higher complexity.
Keywords :
memristor circuits; coupled memristor circuits; coupling strength; dynamic behavior; parallel connections; polarity combination; regular resistor; serial connections; Analytical models; Couplings; Hysteresis; Integrated circuit modeling; Mathematical model; Memristors; Coupling strength; memductance; memristor; parallel connection; serial connection;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2015.2418836
Filename :
7105969
Link To Document :
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