Impact of Biasing Conditions on Displacement Transduction by III-Nitride Microcantilevers

Author

Talukdar, Anup ; Koley, Goutam

Author_Institution

Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1299

Lastpage

1301

Abstract

The impact of biasing conditions on the sensitivity of an AlGaN/GaN heterojunction field-effect transistor deflection transducer, fabricated at the base of a GaN microcantilever, has been investigated. The gauge factor is found to increase with negative gate bias, reaching 3200 at 3.1 V, which is at least an order of magnitude higher than Si piezoresistors. Ultrahigh ac deflection responsivity has also been observed, which reached a maximum value of 140 μV/nm at a gate bias of 2.3 V, consuming only 51 μW of power.

Keywords

III-V semiconductors; aluminium compounds; cantilevers; gallium compounds; gauges; high electron mobility transistors; micromechanical devices; transducers; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN heterojunction field effect transistor deflection transducer; GaN microcantilever; III-nitride microcantilevers; biasing conditions; displacement transduction; gauge factor; negative gate bias; power 51 muW; ultrahigh ac deflection responsivity; voltage 2.3 V; voltage 3.1 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Microelectromechanical systems; Piezoresistive devices; Sensitivity; AlGaN/GaN; HFET; MEMS/NEMS; gauge factor; self-sensing; self-sensing.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2360866

Filename

6932434