DocumentCode
6159
Title
A Fifth-Order 20-MHz Transistorized-
-Ladder LPF With 58.2-dB SFDR, 68-
Author
Yong Chen ; Mak, Pui-In ; Li Zhang ; He Qian ; Yan Wang
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
60
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
11
Lastpage
15
Abstract
A novel transistorized-LC-ladder low-pass filter (LPF) is realized by combining source followers with Q-enhanced floating differential active inductors. It features a small number of active devices to minimize the sources of nonlinearity and noise and a robust frequency response against process variations and device mismatches. A fifth-order 20-MHz LPF prototype is fabricated in 90-nm CMOS. It measures a 58.2-dB spurious-free dynamic range with 6.8 mW of power, which corresponds to a selectivity efficiency of 68-μW/pole/MHz favorably comparable with the state of the art. The die size is merely 0.13 mm2.
Keywords
CMOS integrated circuits; LC circuits; active filters; circuit noise; frequency response; inductors; ladder filters; low-pass filters; CMOS; Q-enhanced floating differential active inductor; SFDR; active device; device mismatch; die size; fifth-order transistorized-LC-ladder LPF; frequency 20 MHz; frequency response; noise; noise figure 58.2 dB; nonlinearity source; power 6.8 mW; process variation; selectivity efficiency; size 90 nm; source follower; spurious-free dynamic range; transistorized-LC-ladder low-pass filter; CMOS integrated circuits; Frequency response; Gain; Gyrators; Noise; Prototypes; Robustness; Active inductor; CMOS; continuous time; floating differential active inductor (FDAI); low-pass filter (LPF); source follower (SF);
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2012.2234894
Filename
6409432
Link To Document