Title :
Near-Field Analysis of Terahertz Pulse Generation From Photo-Excited Charge Density Gradients
Author :
Mueckstein, Raimund ; Natrella, Michele ; Hatem, Osama ; Freeman, Joshua R. ; Graham, Chris S. ; Renaud, Cyril C. ; Seeds, Alwyn J. ; Linfield, Edmund H. ; Davies, A. Giles ; Cannard, Paul J. ; Robertson, Mike J. ; Moodie, Dave G. ; Mitrofanov, Oleg
Author_Institution :
Electron. & Electr. Eng. Dept., Univ. Coll. London, London, UK
Abstract :
Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses gives rise to emission of electromagnetic pulses of terahertz (THz) frequency radiation. To correlate the THz emission with the photo-excited charge density distribution and the photo-current direction, we mapped near-field and far-field distributions of the generated THz waves from GaAs and Fe-doped InGaAs surfaces. The experimental results show that the charge dynamics in the plane of the surface can radiate substantially stronger THz pulses than the charge dynamics in the direction normal to the surface, which is generally regarded as the dominant origin of the emission.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; iron; photoconductivity; terahertz wave spectra; Fe-doped InGaAs surface; GaAs; InGaAs:Fe; charge dynamics; electromagnetic pulse emission; far-field distribution; near-field distribution; photocurrent direction; photocurrent transient excitation; photoexcited charge density gradients; semiconductor surfaces; subpicosecond optical pulses; surface plane; terahertz emission; terahertz frequency radiation; terahertz pulse generation; Apertures; Image edge detection; Optical pulses; Optical surface waves; Strips; Surface treatment; Surface waves; Aperture; Dember effect; emission pattern; far-field radiation pattern; near-field microscopy; near-field radiation; pulse generation; terahertz;
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
DOI :
10.1109/TTHZ.2015.2395389