GO:PEDOT:PSS for High-Performance Green Phosphorescent Organic Light-Emitting Diode

Author

da Silva, W.J. ; Mohd Yusoff, Abd Rashid B. ; Jin Jang

Author_Institution

Univ. Tecnol. Fed. do Parana, Curitiba, Brazil

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1566

Lastpage

1568

Abstract

A high-performance green phosphorescent organic light-emitting diode (GPhOLED) based on easily available graphene oxide (GO)-doped poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) as anode buffer layer and simple device fabricating process has been demonstrated. The GO:PEDOT:PSS-based GPhOLEDs show a better performance compared to the PEDOT:PSS only GPhOLEDs with current and power efficiencies of 52 and 41 cd/A and 36 and 27 lm/W at 1000 cd/m², respectively. These findings shed new light on the development of high-performance GPhOLEDs.

Keywords

buffer layers; graphene; organic light emitting diodes; phosphorescence; polymers; GO:PEDOT:PSS; anode buffer layer; device fabricating process; graphene oxide; high-performance GPhOLED; high-performance green phosphorescent organic light-emitting diode; poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene); Anodes; Graphene; Indium tin oxide; Organic light emitting diodes; Performance evaluation; Polymers; Diode; phosphorescent; poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2284272

Filename

6644285