• DocumentCode
    617715
  • Title

    Evaluating STT-RAM as an energy-efficient main memory alternative

  • Author

    Kultursay, Emre ; Kandemir, Mahmut ; Sivasubramaniam, Anand ; Mutlu, Onur

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2013
  • fDate
    21-23 April 2013
  • Firstpage
    256
  • Lastpage
    267
  • Abstract
    In this paper, we explore the possibility of using STT-RAM technology to completely replace DRAM in main memory. Our goal is to make STT-RAM performance comparable to DRAM while providing substantial power savings. Towards this goal, we first analyze the performance and energy of STT-RAM, and then identify key optimizations that can be employed to improve its characteristics. Specifically, using partial write and row buffer write bypass, we show that STT-RAM main memory performance and energy can be significantly improved. Our experiments indicate that an optimized, equal capacity STT-RAM main memory can provide performance comparable to DRAM main memory, with an average 60% reduction in main memory energy.
  • Keywords
    MRAM devices; buffer storage; performance evaluation; power aware computing; energy analysis; energy-efficient main memory alternative; equal capacity STT-RAM main memory evaluation; key optimization identification; partial write bypass; performance analysis; row buffer write bypass; spin-transfer torque random-access memory; substantial power savings; Arrays; Magnetic tunneling; Organizations; Phase change random access memory; Sensors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Performance Analysis of Systems and Software (ISPASS), 2013 IEEE International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4673-5776-0
  • Electronic_ISBN
    978-1-4673-5778-4
  • Type

    conf

  • DOI
    10.1109/ISPASS.2013.6557176
  • Filename
    6557176