DocumentCode :
618282
Title :
Modeling of low noise amplifier using optically gated MOSFET
Author :
Phade, Gaytri ; Mishra, B.K.
Author_Institution :
SNDT Univ., Mumbai, India
fYear :
2013
fDate :
11-12 April 2013
Firstpage :
220
Lastpage :
225
Abstract :
In any communication system, noise gets added with the signal at receiver end. Noise figure is one of the measures of performance of a receiver circuit with respect to noise. It is seen that receiver circuits are employed with FET devices due to low power consumption, low cost and high package density. With this paper LNA design of Optically Gated MOSFET (OGMOSFET) is carried out as LNA is the first building block of any receiver circuit. LNA is designed for narrow band of 2-3 GHz. Modeling of optical interaction in LNA is presented. Simulation is carried out for single ended LNA in MATLAB. Noise figure is plotted against different W/L and found minimum for W/L=0.35μm. MOSFET having length of 0.35μm is selected for design which is optically gated with incident optical power of 0.25mW and wavelength of 800nm. Inversion level of OGMOSFET increases under illumination. Prime goal of LNA design is noise reduction. Noise figure of LNA is computed under dark and illumination. Result shows that the noise figure of LNA employing OGMOSFET (illuminated gate) reduces significantly as compare to conventional MOSFET (dark).
Keywords :
MOSFET; integrated circuit modelling; low noise amplifiers; FET device; LNA design; MATLAB; OGMOSFET; communication system; frequency 2 GHz to 3 GHz; low noise amplifier modeling; low power consumption; noise figure; noise reduction; optical interaction modeling; optically gated MOSFET; power 0.25 mW; receiver circuit; size 0.35 mum; wavelength 800 nm; Integrated optics; Lighting; Logic gates; Noise; Noise figure; Optical noise; Thermal noise; Illumination; LNA; Noise Figure; OGMOSFET;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information & Communication Technologies (ICT), 2013 IEEE Conference on
Conference_Location :
JeJu Island
Print_ISBN :
978-1-4673-5759-3
Type :
conf
DOI :
10.1109/CICT.2013.6558093
Filename :
6558093
Link To Document :
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