DocumentCode :
6185
Title :
Perovskite-Based Solar Cells With Nickel-Oxidized Nickel Oxide Hole Transfer Layer
Author :
Wei-Chih Lai ; Kun-Wei Lin ; Tzung-Fang Guo ; Jung Lee
Author_Institution :
Dept. of Photonics, Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
62
Issue :
5
fYear :
2015
fDate :
May-15
Firstpage :
1590
Lastpage :
1595
Abstract :
We demonstrated the methylammonium lead iodide (CH3NH3PbI3) perovskite-based solar cells (SCs) with nickel (Ni)-oxidized nickel oxide (NiOx) hole transport layer. The CH3NH3PbI3 perovskite-based SCs with Ni-oxidized NiOx have better short-circuit current density (JSC), open circuit voltage (VOC), and conversion efficiency (η%) than poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS). In addition, the transmittance and work function increased with increasing oxidation temperature of Ni-oxidized NiOx layer. The larger transmittance and work function of Ni-oxidized NiOx could result in less light absorption and hole transport energy loss, respectively. Furthermore, Ni-oxidized NiOx at 450 °C shows the smoothest surface morphology, which could result in the spin-coated CH3NH3PbI3 perovskite film to have better crystal quality. Therefore, the SCs with 450 °C Ni-oxidized NiOx hole transport show the largest η% of 7.75% that is ~1.78 times larger than that of SCs with PEDOT:PSS hole transport layer.
Keywords :
absorption; nickel compounds; short-circuit currents; solar cells; surface morphology; CH3NH3PbI3; NiO; PEDOT:PSS; conversion efficiency; hole transport energy loss; hole transport layer; light absorption; methylammonium lead iodide; nickel-oxidized nickel oxide hole transfer layer; open circuit voltage; oxidation temperature; perovskite-based solar cells; poly(3,4ethylenedioxythiophene) poly(styrenesulfonate); short-circuit current density; surface morphology; temperature 450 C; Glass; Indium tin oxide; Nickel; Oxidation; Photovoltaic cells; Surface morphology; Nickel oxide (NiOₓ); Nickel oxide (NiOx); oxidation temperature; perovskite-based solar cells (SCs); work function; work function.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2413671
Filename :
7072522
Link To Document :
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