DocumentCode :
618516
Title :
Effect of electrical stresses on digital integrated circuits power integrity
Author :
Boyer, A. ; Ben Dhia, S.
Author_Institution :
LAAS, Univ. de Toulouse, Toulouse, France
fYear :
2013
fDate :
12-15 May 2013
Firstpage :
1
Lastpage :
4
Abstract :
Recent studies have shown that integrated circuit aging modifies electromagnetic emission significantly. The proposed paper aims at evaluating the impact of aging on the power integrity of digital integrated circuits and clarifying its origin. On-chip measurements of power supply voltage bounces in a CMOS 90 nm technology test chip are combined with electric stress to characterize the influence of aging on power integrity. Simulation based on ICEM modeling modified by an empirical coefficient in order to take into account the circuit aging is proposed to model the evolution of the power integrity induced by device aging.
Keywords :
CMOS digital integrated circuits; ageing; integrated circuit modelling; integrated circuit testing; CMOS technology test chip; ICEM modeling; digital integrated circuit power integrity; electrical stresses; electromagnetic emission; empirical coefficient; integrated circuit aging; on-chip measurements; power supply voltage; Aging; Integrated circuit modeling; Power measurement; Power supplies; Stress; Voltage measurement; ICEM modelling; Integrated circuits; accelerated aging; power integrity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signal and Power Integrity (SPI), 2013 17th IEEE Workshop on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-5678-7
Type :
conf
DOI :
10.1109/SaPIW.2013.6558327
Filename :
6558327
Link To Document :
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