DocumentCode :
618619
Title :
Imaging and reliability of capacitive RF MEMS switches in III-V technology
Author :
Persano, Anna ; Tazzoli, Augusto ; Quaranta, Fabio ; Meneghesso, Gaudenzio ; Siciliano, Pietro ; Cola, Adriano
Author_Institution :
Unit of Lecce, Inst. for Microelectron. & Microsyst. (IMM), Lecce, Italy
fYear :
2013
fDate :
16-18 April 2013
Firstpage :
1
Lastpage :
4
Abstract :
In this work, the bridge imaging and the reliability of surface-micromachined capacitive RF MEMS switches in III-V technology are presented. A low cost scanning technique allowed us to image the shape of the moveable bridge with a micrometer spatial resolution, thus quantitatively valuating its lowering as a function of the applied voltage. The reliability of the switches was tested under the application of different unipolar and bipolar voltage waveforms, showing that a significant improvement of the switch operation and lifetime can be achieved by applying high frequency bipolar square pulses with suitable durations.
Keywords :
III-V semiconductors; micromachining; microswitches; reliability; III-V technology; bipolar voltage waveform; bridge imaging; high-frequency bipolar square pulse; low-cost scanning technique; micrometer spatial resolution; surface-micromachined capacitive RF MEMS switch reliability; switch lifetime; switch operation; unipolar voltage waveform; Bridge circuits; Dielectrics; Microswitches; Optical switches; Radio frequency; Reliability; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2013 Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4673-4477-7
Type :
conf
Filename :
6559404
Link To Document :
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