Preparation and characterization of the ferroelectric thin films based on the statistical analysis in the justification of the experimental parameters

Process parameters of lead zirconate titanate thin film preparation using metal organic decomposition method were optimized by a statistical method and their effects on the film properties were investigated quantitatively in this study. The crystallization temperature and the precursor formation temperature were found to be important factors for high quality thin films. We also investigated the films deposited on the 4-inch wafer under the optimum conditions and found that it exhibited great film properties. Furthermore, the process damage to the wafer sample by photolithography was clarified experimentally. The results will be useful for the fabrication of the MEMS devices and integration technology of electrical devices including piezoelectric films.