DocumentCode
61876
Title
Interface Properties of 4H-SiC ( 
) and ( 
) MOS Structures Annealed in NO
Author
Nakazawa, Susumu ; Okuda, Takafumi ; Suda, Jun ; Nakamura, T. ; Kimoto, Tatsuya
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Volume
62
Issue
2
fYear
2015
fDate
Feb. 2015
Firstpage
309
Lastpage
315
Abstract
Interface properties of 4H-SiC (112̅0) and (11̅00) walls, the absence of junction FET resistance, and the higher metal-oxide-semiconductor (MOS) structures annealed in nitric oxide are characterized by conductance, high-low, and C-ψs methods. Compared with 4H-SiC (0001) MOS structures, generation of very fast interface states by nitridation is much smaller in 4H-SiC (112̅0) and (11̅00). The effective mobility of planar MOSFETs fabricated on Al+-implanted p-body doped to 1×1017 cm-3 is 103 cm2/Vs on (11̅00), 92 cm2/Vs on (112̅0), and 20 cm2/Vs on (0001). The mobility-limiting factors are discussed on the basis of experimental results. The high channel mobilities for (112̅0) and (11̅00) MOSFETs can be correlated with the lower density of fast interface states generated by nitridation.
Keywords
MOSFET; aluminium; annealing; carrier mobility; electric admittance; interface states; ion implantation; nitridation; semiconductor growth; silicon compounds; wide band gap semiconductors; 4H-SiC (11̅00) MOS structures; 4H-SiC (112̅0) MOS structures; Al+-implanted p-body; SiC:Al; annealing; conductance; effective mobility; high channel mobilities; high-low C-ψs methods; interface properties; interface states; metal-oxide-semiconductor structures; mobility-limiting factors; nitric oxide; nitridation; planar MOSFETs; Face; Interface states; Logic gates; MOS capacitors; Silicon carbide; Temperature measurement; Channel mobility; fast interface states; interface state density; nonpolar face; silicon carbide;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2352117
Filename
6894559
Link To Document